COMPOSITE STRUCTURE OF ZINC OXIDE DEPOSITED EPITAXIALLY ON SAPPHIRE
Composite heteroepitaxial structures of single crystal zinc oxide epitaxially deposited in a layer on a single crystal substrate of alpha-aluminum oxide (sapphire) and process for producing desired orientations of the zinc oxide single crystal layer corresponding to the orientation of the sapphire s...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
23.05.1972
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Subjects | |
Online Access | Get full text |
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Summary: | Composite heteroepitaxial structures of single crystal zinc oxide epitaxially deposited in a layer on a single crystal substrate of alpha-aluminum oxide (sapphire) and process for producing desired orientations of the zinc oxide single crystal layer corresponding to the orientation of the sapphire substrate surface. |
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Bibliography: | Application Number: USD3664867 |