ATOMIC LAYER ETCHING OF METALS USING NOVEL CO-REACTANTS AS HALOGENATING AGENTS

• Main Authors: WOODRUFF, Jacob, MOINPOUR, Mansour, KANJOLIA, Ravindra, DEZELAH, Charles, XIE, Wenyi, PARSONS, Gregory, SAARE, Holger, MCBRIARTY, Martin
• Format: Patent
• Language: English
• Published: 03.04.2025
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE

The disclosed and claimed subject matter relates to thermal atomic layer etch (ALE) processing of metals and alloys thereof (e.g., cobalt and cobalt alloys) using thionyl chloride (SOCl2) or a combination of thionyl chloride and pyridine.