PHOTORESIST UNDERLAYER MATERIALS AND ASSOCIATED METHODS

A semiconductor device may be manufactured using a multiple-layer photoresist that is formed of one or more materials that reduce the likelihood and/or amount of residual material retained in the multiple-layer photoresist. A photoresist underlayer of the multiple-layer photoresist includes a polyme...

Full description

Saved in:
Bibliographic Details
Main Authors SU, Yu-Chung, KUO, Yen-Yu, CHANG, Ching-Yu
Format Patent
LanguageEnglish
Published 13.03.2025
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device may be manufactured using a multiple-layer photoresist that is formed of one or more materials that reduce the likelihood and/or amount of residual material retained in the multiple-layer photoresist. A photoresist underlayer of the multiple-layer photoresist includes a polymer having a highly uniform distribution of polar group monomers. Additionally and/or alternatively, the photoresist underlayer includes a polymer that includes a main chain and a plurality of side chains coupled with the main chain. The side chains include an acid generator component. Since the acid generator component is coupled with the main chain of the polymer by the side chains as opposed to uncontrollably diffusing into the photoresist layer, the acid generated by the acid generator component upon exposure to radiation collects under the bottom of the photoresist layer in a uniform manner and enables the bottommost portions of the photoresist layer to be developed and removed.
Bibliography:Application Number: US202418404434