PHOTO LIGAND DESIGN FOR EUV OR E-BEAM METALLIC PHOTORESISTS

A method for forming a semiconductor device is provided. The method includes forming a photoresist layer comprising an organometallic compound over a substrate. The organometallic compound includes a metal core, at least one hydrolyzable ligand bonded to the metal core, and at least one photoacid ge...

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Bibliographic Details
Main Authors LIN, Chin-Hsiang, ZI, An-Ren, KUO, Yen-Yu, CHANG, Ching-Yu
Format Patent
LanguageEnglish
Published 19.12.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A method for forming a semiconductor device is provided. The method includes forming a photoresist layer comprising an organometallic compound over a substrate. The organometallic compound includes a metal core, at least one hydrolyzable ligand bonded to the metal core, and at least one photoacid generator ligand bonded to the metal core. The method further includes selectively exposing the photoresist layer to radiation and developing the photoresist layer to form a pattern in the photoresist layer.
Bibliography:Application Number: US202318335852