INTERCONNECT SYSTEM WITH IMPROVED LOW-K DIELECTRICS

Methods to form low-k dielectric materials for use as intermetal dielectrics in multilevel interconnect systems, along with their chemical and physical properties, are provided. The deposition techniques described include PECVD, PEALD, and ALD processes where the precursors such as TEOS and MDEOS ma...

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Bibliographic Details
Main Authors Ke, Yu Lun, Liou, Joung-Wei, Chiu, Yi-Wei
Format Patent
LanguageEnglish
Published 31.10.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods to form low-k dielectric materials for use as intermetal dielectrics in multilevel interconnect systems, along with their chemical and physical properties, are provided. The deposition techniques described include PECVD, PEALD, and ALD processes where the precursors such as TEOS and MDEOS may provide the requisite O-atoms and O2 gas may not be used as one of the reactants. The deposition techniques described further include PECVD, PEALD, and ALD processes where O2 gas may be used and, along with the O2 gas, precursors containing embedded Si-O-Si bonds, such as (CH3O)3-Si-O-Si-(CH3O)3) and (CH3)3-Si-O-Si-(CH3)3 may be used.
Bibliography:Application Number: US202418771426