SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes: a drift layer of a first conductivity type; well layers of a second conductivity type; a source layer of a first conductivity type; a gate electrode; an interlayer insulating film; and a source electrode, in which a plurality of body diodes constituted by the well la...

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Bibliographic Details
Main Authors SUGAWARA, Katsutoshi, KAWAHARA, Kotaro, IIJIMA, Akifumi, HINO, Shiro, FUJIYOSHI, Katsuhiro
Format Patent
LanguageEnglish
Published 24.10.2024
Subjects
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORSOR DYNAMO-ELECTRIC CONVERTERS
CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes: a drift layer of a first conductivity type; well layers of a second conductivity type; a source layer of a first conductivity type; a gate electrode; an interlayer insulating film; and a source electrode, in which a plurality of body diodes constituted by the well layer and the drift layer at positions not overlapping with the gate electrode in plan view include a first operation portion that operates at a first body diode operation voltage and a plurality of second operation portions that operate at a second body diode operation voltage lower than the first body diode operation voltage.
Bibliography:Application Number: US202418413662