METHODS OF FABRICATING A SI BJT, AND CORRESPONDING DEVICES

A method of manufacturing a Si BJT device is disclosed comprising prior processing steps; formation of a protective oxide layer over an active area of the Si BJT device; deposition of a dielectric layer, and a layer stack comprising SiGe, on the protective oxide; etching the dielectric layer, and th...

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Bibliographic Details
Main Authors Donkers, Johannes Josephus Theodorus Marinus, Huang, Chih Fan
Format Patent
LanguageEnglish
Published 03.10.2024
Subjects
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