METHODS OF FABRICATING A SI BJT, AND CORRESPONDING DEVICES
A method of manufacturing a Si BJT device is disclosed comprising prior processing steps; formation of a protective oxide layer over an active area of the Si BJT device; deposition of a dielectric layer, and a layer stack comprising SiGe, on the protective oxide; etching the dielectric layer, and th...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
03.10.2024
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Subjects | |
Online Access | Get full text |
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