METHODS OF FABRICATING A SI BJT, AND CORRESPONDING DEVICES

A method of manufacturing a Si BJT device is disclosed comprising prior processing steps; formation of a protective oxide layer over an active area of the Si BJT device; deposition of a dielectric layer, and a layer stack comprising SiGe, on the protective oxide; etching the dielectric layer, and th...

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Bibliographic Details
Main Authors Donkers, Johannes Josephus Theodorus Marinus, Huang, Chih Fan
Format Patent
LanguageEnglish
Published 03.10.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a Si BJT device is disclosed comprising prior processing steps; formation of a protective oxide layer over an active area of the Si BJT device; deposition of a dielectric layer, and a layer stack comprising SiGe, on the protective oxide; etching the dielectric layer, and the layer stack comprising SiGe, thereby removing them from the active area of the Si BJT; deposition of a polysilicon layer, and a further dielectric layer, across the device; etching the polysilicon base, and the further dielectric layer thereby removing it from the active area; implanting, through the protective oxide layer, a p-type dopant into the active area; etching the protective oxide layer, thereby removing it, and leaving voids under the dielectric layer; thermally treating the Si BJT device, thereby filling in voids under the polysilicon base; and subsequent processing steps. Corresponding devices are also disclosed.
Bibliography:Application Number: US202418598099