DOSE REDUCTION BOTTOM ANTI-REFLECTIVE COATING FOR METALLIC PHOTORESIST

• Main Authors: LIN, Chin-Hsiang, ZI, An-Ren, KUO, Yen-Yu, CHANG, Ching-Yu, LIU, Chen-Yu
• Format: Patent
• Language: English
• Published: 03.10.2024
• Subjects: ADHESIVES; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL PAINT OR INK REMOVERS; CHEMISTRY; CINEMATOGRAPHY; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; CORRECTING FLUIDS; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; FILLING PASTES; HOLOGRAPHY; INKS; MATERIALS THEREFOR; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; ORIGINALS THEREFOR; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; POLISHES; SEMICONDUCTOR DEVICES; USE OF MATERIALS THEREFOR; WOODSTAINS

A method of forming semiconductor device includes depositing a coating layer over a substrate, forming a photoresist layer over the coating layer, exposing the photoresist layer to actinic radiation, and developing the photoresist layer to form a patterned photoresist layer. The coating layer includes a polymer containing a first unit having a pendant hydrogen donor group capable of producing a hydrogen radical upon exposure to the actinic radiation or heat, and a second unit having a pendant water donor group capable of producing water upon exposure to the actinic radiation or heat.