METHOD OF ETCHING OBJECT AND ETCHING DEVICE

In a first aspect of a present inventive subject matter, a method of etching includes etching an object at a temperature that is higher than 200° C. with atomized droplets of an etching liquid.

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Bibliographic Details
Main Author TAKAHASHI, Isao
Format Patent
LanguageEnglish
Published 26.09.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a first aspect of a present inventive subject matter, a method of etching includes etching an object at a temperature that is higher than 200° C. with atomized droplets of an etching liquid.
Bibliography:Application Number: US202418731643