SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

The present disclosure relates to slurry compositions used for chemical mechanical polishing of a metal film. An example slurry composition includes abrasive particles, deionized water, and an oxidizer. The oxidizer includes iodine, and is a temperature-sensitive oxidizer capable of controlling both...

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Bibliographic Details
Main Authors Jung, Suyeong, Kong, Hyungoo, Park, Sanghyun, Kim, Eunock, Byun, Yearin, Kim, Inkwon
Format Patent
LanguageEnglish
Published 26.09.2024
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
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Summary:The present disclosure relates to slurry compositions used for chemical mechanical polishing of a metal film. An example slurry composition includes abrasive particles, deionized water, and an oxidizer. The oxidizer includes iodine, and is a temperature-sensitive oxidizer capable of controlling both a static etch rate and a removal rate of the metal film when a polishing temperature during the chemical mechanical polishing is about 5° C. to about 100° C.
Bibliography:Application Number: US202418609795