APPARATUS AND METHOD FOR ULTRA-FAST CRYSTALLIZATION IN PHASE - CHANGE RF SWITCHES
An indirectly heated phase change switch (IPCS) for radio frequency (RF) switching, comprises two RF ports and an RF path therebetween, a phase change material (PCM) located between the RF ports, an embedded heater separated from the PCM by a dielectric layer, the embedded heater configured to provi...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
19.09.2024
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Subjects | |
Online Access | Get full text |
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Summary: | An indirectly heated phase change switch (IPCS) for radio frequency (RF) switching, comprises two RF ports and an RF path therebetween, a phase change material (PCM) located between the RF ports, an embedded heater separated from the PCM by a dielectric layer, the embedded heater configured to provide thermal actuation of the PCM to bring about phase changes between a crystalline state and an amorphous state to provide Ohmic switching, and a bias voltage on the IPCS across said RF path. The bias is provided during heating to improve the crystallization time. |
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Bibliography: | Application Number: US202218276267 |