METHOD AND DEVICE RELATED TO SEAMLESS METAL CONTACT

• Main Authors: CHANG, Chien, WANG, Sung-Li, LIANG, Shuen-Shin, LIN, Kan-Ju, CHIEN, Harry, CHU, Chia-Hung
• Format: Patent
• Language: English
• Published: 19.09.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure provides a method for semiconductor fabrication. The method includes depositing a first metal layer by a first deposition over a source/drain (S/D) feature and over side portions of a trench exposing the S/D feature. The first metal layer is thicker over the S/D feature than over side portions of the trench. The method includes growing a metal on the first metal layer by a second deposition to form a second metal layer filling up the trench. The second deposition is different from the first deposition and the growing of the metal in a vertical direction is grown at a faster rate than the growing of the metal in a horizontal direction. After growing the metal to form the second metal layer, the method includes planarizing the first and second metal layers to form an S/D contact. The method forms an S/D via on the second metal layer.