NITRIDE SEMICONDUCTOR DEVICE

• Main Authors: SHIBATA, Daisuke, TAMURA, Satoshi, TORII, Naoki
• Format: Patent
• Language: English
• Published: 19.09.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A nitride semiconductor device includes a substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer that has a resistance higher than that of the second semiconductor layer, and a fourth semiconductor layer of the second conductivity type that are arranged sequentially from a lower side; a fifth semiconductor layer including a channel region of the first conductivity type, a portion of the fifth semiconductor layer being disposed along the inner surface of a first opening and the other portion of the fifth semiconductor layer being disposed above the fourth semiconductor layer, the first opening penetrating through the fourth semiconductor layer, the third semiconductor layer, and the second semiconductor layer; a sixth semiconductor layer of the second conductivity type disposed above the fifth semiconductor layer; a gate electrode; a source electrode; and a drain electrode.