SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively di...

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Main Authors Chen, Kuang-Hsiu, Wang, Kai-Hsiang, Jiang, Bing-Yang, Wu, Guan-Ying, Huang, Jhong-Yi, Tang, Chi-Hsuan, Huang, Chung-Ting, Lin, Yu-Shu, Cheng, Yu-Lin, Chen, Chao-Nan, Chuang, Wei-Chih, Liu, Chia-Jong, Chen, Chun-Jen
Format Patent
LanguageEnglish
Published 12.09.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.
Bibliography:Application Number: US202418665600