HIGH THERMAL DISSIPATION FEATURES FOR A FLIP CHIP STRUCTURE

• Main Authors: Liu, Gang, Zhou, Zengyu, Sun, Kandy, Huang, Yiqin, Tang, Jerry, Chiu, Hope, Zhang, Cong, Yang, Xuyi
• Format: Patent
• Language: English
• Published: 12.09.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor package having various thermal dissipation features to dissipate heat. The semiconductor package may include an integrated circuit and a non-volatile storage device. Vias may be formed in the substrate and filled with a thermal conductive material. A pyrolytic graphite sheet overlays a top surface of the substrate and the vias. The pyrolytic graphite sheet defines one or more openings that enable the integrated circuit and the non-volatile storage device to be coupled to the top surface of the substrate. The integrated circuit is covered by another thermal conductive material such as a copper or silver paste. The copper or silver paste also covers a sidewall of the pyrolytic graphite sheet. The semiconductor package is enclosed by molding material and a metal layer. The pyrolytic graphite sheet connects the metal layer and the thermal conductive material overlaying the integrated circuit to form various thermal dissipation paths.