SEMICONDUCTOR DEVICE

• Main Authors: Gwak, Min Chan, Lee, Kyoung Woo, Kim, Guk Hee, Lee, Anthony Dongick, Na, Sang Cheol, Kim, Young Woo
• Format: Patent
• Language: English
• Published: 12.09.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes an active pattern on a first surface of a substrate and extending in a first direction, a field insulating film on the first surface and a side surface of the active pattern, a gate structure on the active pattern and field insulating film and extending in a second direction intersecting the first direction, a source/drain area on a side surface of the gate structure and contacting the active pattern, and a through-contact extending in a third direction perpendicular to the first and second directions and extending through the field insulating film. The device further includes a buried pattern in the substrate contacting the through-contact, a backside wiring structure on a second surface of the substrate and electrically connected to the buried pattern, and a heat-dissipating structure in the substrate adjacent to the buried pattern. The heat-dissipating structure fills a trench extending from the second surface into the substrate.