PATTERN CORRECTION DEVICE, PATTERN CORRECTION METHOD, AND PATTERN FORMATION METHOD FOR SEMICONDUCTOR DEVICES

A pattern correction method includes acquiring, from a database, full shot data including full shot data coordinates and a misalignment value, calculating a deformation coefficient of the full shot data based on a cantilever beam analysis method with respect to the full shot data, extracting first-c...

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Bibliographic Details
Main Authors JANG, Junyoung, CHUNG, Ingyun, MOON, Sungyong, PARK, Dongjin
Format Patent
LanguageEnglish
Published 12.09.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A pattern correction method includes acquiring, from a database, full shot data including full shot data coordinates and a misalignment value, calculating a deformation coefficient of the full shot data based on a cantilever beam analysis method with respect to the full shot data, extracting first-coordinate data along a first axis in a bit line direction and second-coordinate data along a second axis in a word line direction based on the full shot data, classifying the full shot data based on the first-coordinate data and the second-coordinate data, removing outliers from the full shot data.
Bibliography:Application Number: US202418411581