ULTRA HIGH-K HAFNIUM OXIDE AND HAFNIUM ZIRCONIUM OXIDE FILMS

• Main Authors: Nemani, Srinivas, Yieh, Ellie, Kashyap, Harshil, Yadav, Ajay Kumar, Kummel, Andrew C, Wong, Keith T
• Format: Patent
• Language: English
• Published: 12.09.2024
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Described herein is a method for performing an atomic layer deposition process to form a silicon doped oxide film on a surface of the substrate. The oxide film may be a hafnium-zirconium oxide film, or a zirconium oxide film. The atomic layer deposition process may include forming the oxide layers and a silicon layer using a hydrogen peroxide as at least one of the precursors used in formation of the oxide layers.