SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS

In a silicon carbide semiconductor device, in a plan view, a plurality of source contact holes is intermittently provided in a second direction along a trench gate, and a source electrode is provided on an insulating film and is electrically connected to a source layer via the plurality of source co...

Full description

Saved in:
Bibliographic Details
Main Authors TAKAHASHI, Tetsuo, KIMURA, Yoshitaka, SUGAWARA, Katsutoshi, YOSHIDA, Motoru, FUKUI, Yutaka
Format Patent
LanguageEnglish
Published 05.09.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:In a silicon carbide semiconductor device, in a plan view, a plurality of source contact holes is intermittently provided in a second direction along a trench gate, and a source electrode is provided on an insulating film and is electrically connected to a source layer via the plurality of source contact holes. Intermittent recesses reflecting the shapes of the plurality of source contact holes are provided on a surface of the source electrode on a side opposite to the semiconductor substrate.
Bibliography:Application Number: US202318526582