RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND POLYMER

A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid. The resist composition contains a polymer containing a siloxane bond and an ionic group represented by General Formula (I0), which is decomposed upon exposure to gene...

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Bibliographic Details
Main Authors YAMADA, Tomotaka, IBATA, Keiichi, UEHARA, Takuya
Format Patent
LanguageEnglish
Published 05.09.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid. The resist composition contains a polymer containing a siloxane bond and an ionic group represented by General Formula (I0), which is decomposed upon exposure to generate an acid. In General Formula (I0), Mm+ represents a sulfonium cation or an iodonium cation, m represents an integer of 1 or more, and * represents a bonding site
Bibliography:Application Number: US202418424025