METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE

Provided is a method for manufacturing a semiconductor laser device that includes a semiconductor substrate, and a semiconductor stacked body including an active layer and formed on the semiconductor substrate. The method includes a first step of preparing a wafer including a plurality of device por...

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Bibliographic Details
Main Authors OKAWARA, Satoru, Nagakura, Takehito, Furuoka, Keita, Sugiyama, Atsushi
Format Patent
LanguageEnglish
Published 29.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:Provided is a method for manufacturing a semiconductor laser device that includes a semiconductor substrate, and a semiconductor stacked body including an active layer and formed on the semiconductor substrate. The method includes a first step of preparing a wafer including a plurality of device portions to each become the semiconductor laser device, the plurality of device portions being arranged in a first direction perpendicular to an optical waveguide direction of the semiconductor stacked body, and a second step of forming a pressing mark group including a plurality of continuous pressing marks on a first primary surface of the wafer or a second primary surface opposite to the first primary surface to be positioned on each of a plurality of first boundary lines that partition the plurality of device portions arranged in the first direction after the first step.
Bibliography:Application Number: US202418584232