SEMICONDUCTOR DEVICES

A semiconductor device includes a substrate that has first and second surfaces opposite to each other in a first direction, a first fin-type pattern that protrudes in the first direction from the first surface of the substrate and extends in a second direction, a first source/drain pattern on the fi...

Full description

Saved in:
Bibliographic Details
Main Authors Gwak, Min Chan, Lee, Kyoung Woo, Kim, Guk Hee, Lee, Anthony Dongick, Na, Sang Cheol, Kim, Young Woo
Format Patent
LanguageEnglish
Published 22.08.2024
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A semiconductor device includes a substrate that has first and second surfaces opposite to each other in a first direction, a first fin-type pattern that protrudes in the first direction from the first surface of the substrate and extends in a second direction, a first source/drain pattern on the first fin-type pattern, a first source/drain contact on the first source/drain pattern, a contact connection via that extends in the first direction and is electrically connected to the first source/drain contact, a buried conductive pattern that is in the substrate, is electrically connected to the contact connection via, and has first and second surfaces opposite to each other in the first direction, the first surface of the buried conductive pattern facing the first source/drain contact, and first buried insulating liners that extend along sidewalls and along the first surface of the buried conductive pattern.
Bibliography:Application Number: US202318500797