SHEAR WAVE MODE PIEZOELECTRIC RESONATOR

According to an aspect, there is provided a structure for a thin-film bulk acoustic resonator. The structure comprises a substrate (101) comprising a cavity (104) having at least one slanted flat surface (103) facing away from the cavity and a piezoelectric bulk material layer (102) deposited on sai...

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Bibliographic Details
Main Author KAITILA, Jyrki
Format Patent
LanguageEnglish
Published 22.08.2024
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Summary:According to an aspect, there is provided a structure for a thin-film bulk acoustic resonator. The structure comprises a substrate (101) comprising a cavity (104) having at least one slanted flat surface (103) facing away from the cavity and a piezoelectric bulk material layer (102) deposited on said at least one slanted flat surface.
Bibliography:Application Number: US202218686314