THREE-DIMENSIONAL MEMORY DEVICE WITH INTEGRATED CONTACT AND SUPPORT STRUCTURE AND METHOD OF MAKING THE SAME

A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, each including a respective vertical semi...

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Bibliographic Details
Main Authors RAJASHEKHAR, Adarsh, MATSUNO, Koichi, KANAKAMEDALA, Senaka
Format Patent
LanguageEnglish
Published 15.08.2024
Subjects
ELECTRICITY
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Summary:A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, each including a respective vertical semiconductor channel and a vertical stack of memory elements, a contact via structure contacting a reference electrically conductive layer that is one of the electrically conductive layers, and at least one silicon oxide liner laterally surrounding a cylindrical portion of the contact via structure and contacting a laterally protruding portion of the contact via structure.
Bibliography:Application Number: US202418616682