SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device includes a memory cell that extends in a first horizontal direction, a second horizontal direction that intersects the first horizontal direction, and a vertical direction. The memory cell includes a first transistor including a first channel structure, a second transis...

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Bibliographic Details
Main Authors Lee, Jeonil, Lee, Juho, Lee, Kyunghwan
Format Patent
LanguageEnglish
Published 15.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor memory device includes a memory cell that extends in a first horizontal direction, a second horizontal direction that intersects the first horizontal direction, and a vertical direction. The memory cell includes a first transistor including a first channel structure, a second transistor including a second channel structure, a charge storage element electrically connected to a first end of the second channel structure and adjacent to the first channel structure a first bit line electrically connected to a first end of the first channel structure and that extends in the second horizontal direction, a selection line electrically connected to a second end of the first channel structure and that extends in the second horizontal direction, a second bit line electrically connected to a second end of the second channel structure and that extends in the second horizontal direction, and a gate line that extends in the vertical direction.
Bibliography:Application Number: US202318537987