MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

A semiconductor device includes a semiconductor substrate, a gate structure, a first drift region, a first source/drain region, and a gate oxide layer. The gate structure and the gate oxide layer are disposed on the semiconductor substrate. The first drift region is disposed in the semiconductor sub...

Full description

Saved in:
Bibliographic Details
Main Authors Tsao, Ruei-Jhe, Yang, Tsung-Yu, Chang, Che-Hua, Li, Shin-Hung
Format Patent
LanguageEnglish
Published 15.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device includes a semiconductor substrate, a gate structure, a first drift region, a first source/drain region, and a gate oxide layer. The gate structure and the gate oxide layer are disposed on the semiconductor substrate. The first drift region is disposed in the semiconductor substrate. The first source/drain region is disposed in the first drift region. At least a part of a first portion of the gate oxide layer is disposed between the gate structure and the semiconductor substrate in a vertical direction. A second portion of the gate oxide layer is disposed between the first portion and the first source/drain region in a horizontal direction. The second portion includes a bottom extending downwards and a first depressed top surface located above the bottom. A part of the first drift region is located under the first portion and the second portion of the gate oxide layer.
Bibliography:Application Number: US202418645366