CHAMBER CLEAN FOR DRY DEVELOP OF METAL ORGANIC PHOTORESISTS

Embodiments disclosed herein include a method of cleaning a chamber. In an embodiment, the method comprises flowing a first processing gas into the chamber, where the first processing gas reacts with a metal-organic compound in the chamber to form a first volatile compound. In an embodiment, the met...

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Main Authors CHOPRA, NASREEN, CONSTANT, ANDREW, VELLANKI, VENUGOPAL, BALESAN, NIRANJANA, AYALASOMAYAJULA, NEELA, CHAN, KELVIN
Format Patent
LanguageEnglish
Published 15.08.2024
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Summary:Embodiments disclosed herein include a method of cleaning a chamber. In an embodiment, the method comprises flowing a first processing gas into the chamber, where the first processing gas reacts with a metal-organic compound in the chamber to form a first volatile compound. In an embodiment, the method further comprises flowing a second processing gas into the chamber, where the second processing gas reacts with a pure metal of the metal-organic compound to form a second volatile compound. In an embodiment, the method further comprises removing the first volatile compound and the second volatile compound from the chamber.
Bibliography:Application Number: US202418404391