CHAMBER CLEAN FOR DRY DEVELOP OF METAL ORGANIC PHOTORESISTS
Embodiments disclosed herein include a method of cleaning a chamber. In an embodiment, the method comprises flowing a first processing gas into the chamber, where the first processing gas reacts with a metal-organic compound in the chamber to form a first volatile compound. In an embodiment, the met...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
15.08.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Embodiments disclosed herein include a method of cleaning a chamber. In an embodiment, the method comprises flowing a first processing gas into the chamber, where the first processing gas reacts with a metal-organic compound in the chamber to form a first volatile compound. In an embodiment, the method further comprises flowing a second processing gas into the chamber, where the second processing gas reacts with a pure metal of the metal-organic compound to form a second volatile compound. In an embodiment, the method further comprises removing the first volatile compound and the second volatile compound from the chamber. |
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Bibliography: | Application Number: US202418404391 |