Semiconductor Device and Method of Coating a Semiconductor Wafer with High Viscosity Liquid Photoresist Using N2 Purge

• Main Authors: Hwang, Inhee, Choi, Taekyu, Jang, Junghwan, Park, Sanghyun, Nam, Giwoong
• Format: Patent
• Language: English
• Published: 15.08.2024
• Subjects: APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL; APPARATUS SPECIALLY ADAPTED THEREFOR; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; SPRAYING OR ATOMISING IN GENERAL; TRANSPORTING

A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.