SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device according to an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer including at least one metal element selected from a group consisting of tungsten (W), molybdenum (Mo), and cobalt (Co); a charge storage layer provided bet...

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Bibliographic Details
Main Authors SHINGU, Masao, MIZUTANI, Masaharu, TAKAHASHI, Kensei
Format Patent
LanguageEnglish
Published 08.08.2024
Subjects
ELECTRICITY
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Summary:A semiconductor memory device according to an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer including at least one metal element selected from a group consisting of tungsten (W), molybdenum (Mo), and cobalt (Co); a charge storage layer provided between the semiconductor layer and the gate electrode layer; and a first insulating layer provided between the charge storage layer and the gate electrode layer, the first insulating layer including a first region, the first region including aluminum (Al) and oxygen (O), the first insulating layer being in contact with the gate electrode layer.
Bibliography:Application Number: US202418595731