TRANSISTOR WITH EMBEDDED INSULATING STRUCTURE SET

A transistor with an embedded insulating structure set includes a substrate. A gate is disposed on the substrate. A first lightly doped region is disposed at one side of the gate. A second lightly doped region is disposed at another side of the gate. The first lightly doped region and the second lig...

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Bibliographic Details
Main Authors Kuo, Chin-Chia, Tsai, Ming-Hua, Chang, Wei-Hsuan
Format Patent
LanguageEnglish
Published 08.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor with an embedded insulating structure set includes a substrate. A gate is disposed on the substrate. A first lightly doped region is disposed at one side of the gate. A second lightly doped region is disposed at another side of the gate. The first lightly doped region and the second lightly doped region have the same conductive type. The first lightly doped region is symmetrical to the second lightly doped region. A first source/drain doped region is disposed within the first lightly doped region. A second source/drain doped region is disposed within the second lightly doped region. A first insulating structure set is disposed within the first lightly doped region and the first source/drain doped region. The first insulating structure set includes an insulating block embedded within the substrate. A sidewall of the insulating block contacts the gate dielectric layer.
Bibliography:Application Number: US202318120980