SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Provided is a semiconductor device, including a substrate, a first active pattern on the substrate, a first channel pattern on the first active pattern, the first channel pattern including a first semiconductor pattern and a second semiconductor pattern on the first semiconductor pattern, a first so...

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Bibliographic Details
Main Authors HAN, Sanghoon, KIM, Taegon, YI, Jihye, PARK, Yonghee
Format Patent
LanguageEnglish
Published 08.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device, including a substrate, a first active pattern on the substrate, a first channel pattern on the first active pattern, the first channel pattern including a first semiconductor pattern and a second semiconductor pattern on the first semiconductor pattern, a first source/drain pattern connected to the first channel pattern, and a gate electrode on the first channel pattern, wherein each of the first semiconductor pattern and the second semiconductor pattern includes a plurality of semiconductor layers, and at least one superlattice layer between adjacent semiconductor layers among the plurality of semiconductor layers, wherein the at least one superlattice layer included in the first semiconductor pattern has a first length, wherein the at least one superlattice layer included in the second semiconductor pattern has a second length, and wherein the first length is greater than the second length.
Bibliography:Application Number: US202318393009