Semiconductor Devices and Methods of Manufacturing

A device includes a first stack of nanostructures formed over a substrate; a second stack of nanostructures formed adjacent to the first stack; a first gate structure on the nanostructures of the first stack; a second gate structure on the nanostructures of the second stack; a first insulating wall...

Full description

Saved in:
Bibliographic Details
Main Authors Ju, Shi Ning, Cheng, Jung-Chien, Wang, Chih-Hao, Chen, Guan-Lin, Chiang, Kuo-Cheng
Format Patent
LanguageEnglish
Published 01.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A device includes a first stack of nanostructures formed over a substrate; a second stack of nanostructures formed adjacent to the first stack; a first gate structure on the nanostructures of the first stack; a second gate structure on the nanostructures of the second stack; a first insulating wall separating the first gate structure and the second gate structure; a hard mask layer on the first gate structure and on the second gate structure; and a gate contact extending through the hard mask layer to physically and electrically contact the first gate structure.
Bibliography:Application Number: US202318311787