IMAGE SENSOR WITH STACK STRUCTURE AND MANUFACTURING METHOD THEREOF

An image sensor may include a first semiconductor chip including a pixel area and a peripheral area, the pixel area including a plurality of pixels, and a second semiconductor chip coupled to a lower surface of the first semiconductor chip, the second semiconductor chip including a plurality of logi...

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Bibliographic Details
Main Authors JANG, Woojae, PARK, Byungjun, KIM, Jieun
Format Patent
LanguageEnglish
Published 01.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An image sensor may include a first semiconductor chip including a pixel area and a peripheral area, the pixel area including a plurality of pixels, and a second semiconductor chip coupled to a lower surface of the first semiconductor chip, the second semiconductor chip including a plurality of logic elements, the pixel area including a plurality of color filters and a fence in the pixel area, the plurality of color filters corresponding to the plurality of pixels, the fence having a grid pattern, and each of the color filters of the plurality of color filters separated from each other by the fence, the peripheral area including a shield area and a shield outer area, the shield area surrounding the pixel area, and a fence insulating layer included in the shield outer area, the fence insulating layer including a same material as the fence.
Bibliography:Application Number: US202318524723