LARGE-AREA WAFER-SCALE CMOS-COMPATIBLE 2D-MATERIAL INTERCALATION DOPING TOOLS, PROCESSES, AND METHODS, INCLUDING DOPING OF SYNTHESIZED GRAPHENE

• Main Authors: BANERJEE, Kaustav, SUNDAR, Satish, IYENGAR, Ravi
• Format: Patent
• Language: English
• Published: 01.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An intercalation doping apparatus including: a reactor chamber where single or multiple wafers or substrates (SoMWoSubs) are disposed within the reactor chamber, where SoMWoSubs have a diameter or a side distance from 25 mm to 450 mm; a heater, where the heater is configured to provide heat to the SOMWoSubs disposed within the reactor chamber, where the SoMWoSubs include a temperature from 25° C. to 500° C.; where pressure is applied to at least one surface of the SOMWoSubs disposed within the reactor chamber within a range of 2 bar to 500 bar; and a dopant application apparatus, where the dopant application apparatus includes at least valves and tubing which bring dopants from outside to within the reactor chamber and includes at least a dopant crucible disposed within the reactor chamber, where the dopants include material in solid, liquid, or gaseous phase, and where the dopants include intercalation doping agents.