IMAGE SENSOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: Yaung, Dun-Nian, Wang, Chen-Jong, Wang, Tzu-Jui, Hsiao, Chia-Chi, Chung, Chi-Hsien, Chuang, Chun-Hao
• Format: Patent
• Language: English
• Published: 25.07.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated chip including a first semiconductor substrate. The first semiconductor substrate includes a doped region. A first photodetector and a second photodetector are in the first semiconductor substrate. A trench isolation layer at least partially surrounds the first photodetector and the second photodetector and extends between the first photodetector and the second photodetector. The trench isolation layer has a first pair of sidewalls. The first semiconductor substrate extends from the first photodetector, between the first pair of sidewalls, to the second photodetector. The doped region is between the first pair of sidewalls. The first photodetector and a first gate partially form a first transistor. The second photodetector and a second gate partially form a second transistor. A second semiconductor substrate is over the first gate and the second gate. A third transistor is along the second semiconductor substrate. The third transistor is coupled to the first transistor.