METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Method of manufacturing semiconductor device, includes forming protective layer over substrate having plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of:Wherein a, b, c, d, e, f, g, h, and i are each ind...

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Bibliographic Details
Main Authors HUANG, Jing Hong, CHANG, Ching-Yu, LAI, Wei-Han
Format Patent
LanguageEnglish
Published 25.07.2024
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Summary:Method of manufacturing semiconductor device, includes forming protective layer over substrate having plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of:Wherein a, b, c, d, e, f, g, h, and i are each independently H, -OH, -ROH, -R(OH)2, -NH2, -NHR, -NR2, -SH, -RSH, or -R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over protective layer, and resist layer is patterned.
Bibliography:Application Number: US202418597065