DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIELD DURING A PROGRAMMING OPERATION

A request to execute a programming operation to program a set of memory cells associated with a target wordline of a memory device is identified. At a first time during application of a programming voltage to the target wordline, causing a first adjusted pass through voltage to be applied to a first...

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Bibliographic Details
Main Authors Lu, Ching-Huang, Dong, Yingda, Diep, Vinh Quang
Format Patent
LanguageEnglish
Published 25.07.2024
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A request to execute a programming operation to program a set of memory cells associated with a target wordline of a memory device is identified. At a first time during application of a programming voltage to the target wordline, causing a first adjusted pass through voltage to be applied to a first portion of a first set of drain-side wordlines of the memory device. At a second time during application of the programming voltage to the target wordline, causing a second pass through voltage to be applied to a second portion of the first set of drain-side wordlines and to one or more source-side wordlines of the memory device, where the first adjusted pass through voltage is greater than the second pass through voltage.
Bibliography:Application Number: US202418411532