MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Provided are a memory device and a method of manufacturing the same. The memory device includes: a stack structure; a first source/drain region and a second source/drain region located in a substrate beside the stack structure; a first self-aligned contact connected to the first source/drain region;...

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Bibliographic Details
Main Authors Tsai, Yao-Ting, Liao, Hsiu-Han, Chuang, Che-Fu
Format Patent
LanguageEnglish
Published 18.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided are a memory device and a method of manufacturing the same. The memory device includes: a stack structure; a first source/drain region and a second source/drain region located in a substrate beside the stack structure; a first self-aligned contact connected to the first source/drain region; a second self-aligned contact connected to the second source/drain region; a first liner structure located between the first self-aligned contact and a first sidewall of the stack structure; and a second liner structure located between the second self-aligned contact and a second sidewall of the stack structure. The first liner structure and the second liner structure are not connected and do not cover the stack structure.
Bibliography:Application Number: US202418617590