NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

A non-volatile memory device includes a substrate, a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers, wherein the plurality of gate electrodes are stacked in a step shape, a channel structure that extends through the mold structure, and a cell contac...

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Bibliographic Details
Main Authors Kim, Byongju, Park, Wonjun, Jung, Jaemin, Choi, Dongsung, Cheon, Changheon
Format Patent
LanguageEnglish
Published 04.07.2024
Subjects
ELECTRICITY
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Summary:A non-volatile memory device includes a substrate, a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers, wherein the plurality of gate electrodes are stacked in a step shape, a channel structure that extends through the mold structure, and a cell contact that extends through the mold structure, the cell contact is connected to a first gate electrode, and the cell contact is not electrically connected to a second gate electrode among the plurality of gate electrodes, wherein the first gate electrode includes: an extension portion; a pad portion having a vertical thickness greater than a vertical thickness of the extension portion; and a connection portion that electrically connects the pad portion to the cell contact, the connection portion has a vertical thickness less than a vertical thickness of the pad portion, and one or more first insulating rings on the connection portion.
Bibliography:Application Number: US202318493853