SEMICONDUCTOR MEMORY DEVICE PERFORMING RECURSIVE ZQ CALIBRATION AND CALIBRATION METHOD THEREOF

A semiconductor memory device may include an impedance adjustment pad, a dummy pull-down driver and an external resistor connected in parallel between the impedance adjustment pad and a ground, a recursive code generation circuit configured to recursively generate a pull-up code and a pull-down code...

Full description

Saved in:
Bibliographic Details
Main Authors BAE, SEUNGJUN, Lee, Younggyu, LEE, TAESUNG, LEE, SEONKYOO, KIM, TONGSUNG
Format Patent
LanguageEnglish
Published 04.07.2024
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
Online AccessGet full text

Cover

More Information
Summary:A semiconductor memory device may include an impedance adjustment pad, a dummy pull-down driver and an external resistor connected in parallel between the impedance adjustment pad and a ground, a recursive code generation circuit configured to recursively generate a pull-up code and a pull-down code corresponding to a target resistance by using the external resistor and the dummy pull-down driver as a reference resistance, in an impedance calibration operation of the semiconductor memory device, a code register configured to store the generated pull-up code and the pull-down code, and a calibration control logic circuit configured to control the recursive code generation circuit during a plurality of steps in the impedance calibration operation while adjusting a resistance value of the dummy pull-down driver.
Bibliography:Application Number: US202318381611