MIDDLE OF THE LINE ARCHITECTURE WITH SUBTRACTIVE SOURCE/DRAIN CONTACT

• Main Authors: Miller, Eric, Simon, Andrew Herbert, Felix, Nelson
• Format: Patent
• Language: English
• Published: 04.07.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes first and second nanosheet stacks above an upper surface of a semiconductor substrate, a first source/drain on an end of the first nanosheet stack, and a second source/drain on an end of the second nanosheet stack. A first gate stack wraps around individual channels of the first nanosheet stack and a second gate stack wraps around individual channels the second nanosheet stack. An interlayer dielectric covers the first and second nanosheet stacks, the first and second source/drains, and the first and second gate stacks. The semiconductor device further includes a first source/drain contact that contacts the first source/drain and a second source/drain contact that contacts the second source/drain. The first and second source/drain contacts extend continuously from the first and second source/drains, respectively, to an upper surface of the interlayer dielectric.