BACK GATE ION-SENSITIVE FIELD EFFECT TRANSISTOR SENSING WITH STACKED HIGH-K NANOSHEETS
A device for analyte sensing and method of forming the device. The device includes a first semiconductor layer including a source region, a drain region and a stack of semiconductor nanosheets extending between the source region and the drain region; a first dielectric layer on the semiconductor lay...
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Format | Patent |
Language | English |
Published |
04.07.2024
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Abstract | A device for analyte sensing and method of forming the device. The device includes a first semiconductor layer including a source region, a drain region and a stack of semiconductor nanosheets extending between the source region and the drain region; a first dielectric layer on the semiconductor layer; and a cavity extending through the first dielectric layer and the first semiconductor layer. The semiconductor nanosheets are disposed within the cavity, and a portion of the cavity resides in between the semiconductor nanosheets. |
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AbstractList | A device for analyte sensing and method of forming the device. The device includes a first semiconductor layer including a source region, a drain region and a stack of semiconductor nanosheets extending between the source region and the drain region; a first dielectric layer on the semiconductor layer; and a cavity extending through the first dielectric layer and the first semiconductor layer. The semiconductor nanosheets are disposed within the cavity, and a portion of the cavity resides in between the semiconductor nanosheets. |
Author | Yeo, Chia Ching Lim, Khee Yong Quek, Kiok Boone Elgin |
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Snippet | A device for analyte sensing and method of forming the device. The device includes a first semiconductor layer including a source region, a drain region and a... |
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SubjectTerms | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING |
Title | BACK GATE ION-SENSITIVE FIELD EFFECT TRANSISTOR SENSING WITH STACKED HIGH-K NANOSHEETS |
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