BACK GATE ION-SENSITIVE FIELD EFFECT TRANSISTOR SENSING WITH STACKED HIGH-K NANOSHEETS

A device for analyte sensing and method of forming the device. The device includes a first semiconductor layer including a source region, a drain region and a stack of semiconductor nanosheets extending between the source region and the drain region; a first dielectric layer on the semiconductor lay...

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Bibliographic Details
Main Authors Lim, Khee Yong, Yeo, Chia Ching, Quek, Kiok Boone Elgin
Format Patent
LanguageEnglish
Published 04.07.2024
Subjects
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Summary:A device for analyte sensing and method of forming the device. The device includes a first semiconductor layer including a source region, a drain region and a stack of semiconductor nanosheets extending between the source region and the drain region; a first dielectric layer on the semiconductor layer; and a cavity extending through the first dielectric layer and the first semiconductor layer. The semiconductor nanosheets are disposed within the cavity, and a portion of the cavity resides in between the semiconductor nanosheets.
Bibliography:Application Number: US202318149200