SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes a horizontal layer spaced apart from a lower structure to extend in a direction parallel to the lower structure; a vertical conductive line extending in a direction perpendicular to the lower structure and coupled to a first-side end of the horizontal layer; a data st...

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Bibliographic Details
Main Authors CHO, Jin Sun, OH, Dong Yean
Format Patent
LanguageEnglish
Published 27.06.2024
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Summary:A semiconductor device includes a horizontal layer spaced apart from a lower structure to extend in a direction parallel to the lower structure; a vertical conductive line extending in a direction perpendicular to the lower structure and coupled to a first-side end of the horizontal layer; a data storage element coupled to a second-side end of the horizontal layer; and a horizontal conductive line including a first horizontal conductive line and a second horizontal conductive line that are vertically asymmetrical with the horizontal layer interposed therebetween.
Bibliography:Application Number: US202318324159