SEMICONDUCTOR PACKAGE

A semiconductor package includes a first substrate including silicon, a first insulating layer in contact with the first substrate, the first insulating layer including silicon oxide, the first insulating layer having a first concentration of silicon, a second insulating layer in contact with the fi...

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Bibliographic Details
Main Authors JUNG, Eun Suk, KIM, Tae Yeong, MIN, Jun Hong, CHO, So Hye
Format Patent
LanguageEnglish
Published 27.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor package includes a first substrate including silicon, a first insulating layer in contact with the first substrate, the first insulating layer including silicon oxide, the first insulating layer having a first concentration of silicon, a second insulating layer in contact with the first insulating layer, the second insulating layer including silicon oxide, the second insulating layer having a second concentration of silicon, the second concentration lower than the first concentration, and a structure on the second insulating layer. The first concentration is a ratio of a weight of silicon in the first insulating layer to a total weight of the first insulating layer, the second concentration is a ratio of a weight of silicon in the second insulating layer to a total weight of the second insulating layer, and the first concentration is in a range from 20 wt % to 50 wt %.
Bibliography:Application Number: US202318524454