DRY ETCHING METHODS FOR REDUCING FLUOROCARBON-CONTAINING GAS EMISSIONS

A dry etching method for reducing fluorocarbon-containing gas emissions is provided. The method includes supplying a first gas to a reaction chamber to adjust a process parameter related to the reaction chamber. The method also includes supplying a second gas to the reaction chamber. The method furt...

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Bibliographic Details
Main Authors WANG, Chun-Chieh, OU YANG, Tzu-Ming, SU, Yuan-Hao
Format Patent
LanguageEnglish
Published 27.06.2024
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Summary:A dry etching method for reducing fluorocarbon-containing gas emissions is provided. The method includes supplying a first gas to a reaction chamber to adjust a process parameter related to the reaction chamber. The method also includes supplying a second gas to the reaction chamber. The method further includes turning on a power source to ionize the second gas, thereby generating plasma. The plasma is used to remove part of a material layer on a substrate. The composition of the first gas is different from the composition of the second gas.
Bibliography:Application Number: US202318350154