LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE

The disclosure relates to the technical field of semiconductor manufacturing and particularly relates to a light emitting diode having an epitaxial structure including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. An upper surface and a sidewall of a first...

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Main Authors HU, Pengjie, CHOU, Liping, LIU, Shengnan, KUO, Huanshao, LIU, Jiayu, PENG, Yuren, WU, Qiaotian, KE, Weifan
Format Patent
LanguageEnglish
Published 20.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The disclosure relates to the technical field of semiconductor manufacturing and particularly relates to a light emitting diode having an epitaxial structure including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. An upper surface and a sidewall of a first pad electrode are covered with a first metal covering layer. The first metal covering layer is provided with a bump at a bottom portion of the sidewall of the first pad electrode. The bump is located below the insulating layer. In this way, the metal covering layer is allowed to completely cover the pad electrode and protect the edge of the bottom portion of the pad electrode. After the insulating layer is detached herein, an active material in the pad electrode below the insulating layer is prevented from contacting the external environment, and the reliability of the light emitting diode is therefore improved.
Bibliography:Application Number: US202318488050