Thin Film Transistor, Manufacturing Method Thereof and Display Apparatus Comprising the Same

A thin film transistor, and a manufacturing method of the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode spaced apart from the active layer and partially overlapping the active layer, wherein the active layer includes a first oxide semicond...

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Bibliographic Details
Main Authors Park, JeeHo, Kim, Hyunki, Kim, Sunggu, Lee, KwangHeum
Format Patent
LanguageEnglish
Published 20.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A thin film transistor, and a manufacturing method of the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode spaced apart from the active layer and partially overlapping the active layer, wherein the active layer includes a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, wherein the first oxide semiconductor layer has an amorphous structure, the second oxide semiconductor layer has a crystalline structure. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.
Bibliography:Application Number: US202318506486