SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device includes a channel layer, a lower barrier layer on the channel layer and including first impurities, an upper barrier layer arranged on the lower barrier layer and including second impurities having a concentration greater than a concentration of the first impurities, a gate e...

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Bibliographic Details
Main Authors PARK, Junhyuk, KIM, Joonyong, KIM, Boram, OH, Jaejoon, KIM, Jongseob, HWANG, Sunkyu
Format Patent
LanguageEnglish
Published 20.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a channel layer, a lower barrier layer on the channel layer and including first impurities, an upper barrier layer arranged on the lower barrier layer and including second impurities having a concentration greater than a concentration of the first impurities, a gate electrode on the upper barrier layer, a gate semiconductor layer between the upper barrier layer and the gate electrode, and a source and a drain that are on the channel layer and are spaced apart from each other.
Bibliography:Application Number: US202318321284